Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium green's functions

 
 
 
 

Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium green's functions

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Title: Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium green's functions
Author: Fonseca, James Ernest
Description: In the sub-50nm scale, the aggressive scaling of MOSFETs is expected to culminate in dual-gate (DG) architectures on SOI substrates. DG MOSFETs are widely accepted to be the ultimate design that silicon can deliver in terms of on and off currents. So far, the design efforts on these novel structures have concentrated on ideal geometries and doping profiles. However, at nanometer scale, devices fabricated with lithography and etching techniques cannot deliver perfect reproductions of the ideal design and suffer significantly from fluctuation effects associated with random doping and interfaces. While the former is less important in undoped, thin-body architecture, the interface roughness is a crucial factor in DGMOSFET performance, as indicated by the International Technology Roadmap for Semiconductors [1]. This work investigates, qualitatively and quantitatively, the effects of interface roughness of device operation of DGMOSFETs. Statistical ensembles of devices are simulated to examine device characteristic variations owing to the random element of interface roughness. The effect of roughness parameter changes on device operation is also investigated. Three transport models, namely drift-diffusion, quantum ballistic and non-equilibrium Green's function, are compared. Both device electrostatics and carrier transport are affected by interface roughness, and quantum mechanical tunneling plays a significant role in the latter.
Permanent Link: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1176318345
http://hdl.handle.net/2374.OX/13911
Date: 2004

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