AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling

Title:	AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling
Author:	Langley, Derrick
Description:	Investigation has been done on procedure, development, and verification of transistor topology for Aluminum-Gallium Nitride/Gallium Nitride (AlGaN/GaN) High-Electron Mobility Transistor (HEMTs). To date various models have been published that address modeling issues dealing with AlGaN/GaN HEMTs. Many models rely on analytic parameter solutions to help define model behavior. In order to find an optimum transistor at X-band frequency, 8-12 Gigahertz (GHz), layout, testing, modeling and simulation was conducted on various transistor topologies. Theoretical and experimental analysis has been completed for device operating point selection in measurement and modeling to account for self-heating and radio frequency (RF) dispersion effects. The model extraction allows for observations in parameter extraction changes that occur from growth imperfections to heating effects on the different topologies. The model extraction techniques allow for precise parameter extraction, resulting in predicted direct current (DC), scattering parameter (s-parameter), and large signal power performance verification at X-band.
Permanent Link:	http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294 http://hdl.handle.net/2374.OX/19631
Date:	2007

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